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Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle‐resolved photoelectron spectroscopy

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7 Author(s)
Richter, H.W. ; Max‐Planck‐Institut für Festkörperforschung, D‐7000 Stuttgart 80, Federal Republic of Germany ; Barth, J. ; Ghijsen, J. ; Johnson, R.L.
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Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:4 ,  Issue: 4 )