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Nucleation and growth of GaAs on Ge and the structure of antiphase boundaries

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1 Author(s)
Petroff, P.M. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.583529 

Using an ultrahigh vacuum (UHV) scanning transmission electron microscope equipped with a molecular beam epitaxy chamber, the formation of the GaAs/Ge interface produced by deposition of GaAs on Ge substrate thin films with (111) or (110) or (100) orientations has been investigated. Three‐dimensional nucleation and growth of facetted GaAs epitaxial islands are characteristic of this interface. The formation energy and orientation of antiphase boundaries are obtained from the structure analysis of these ultrathin films.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:4 ,  Issue: 4 )