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A molybdenum silicide (Mo‐silicide) film deposited on a quartz glass substrate offers major advantages as a high performance photomask material for very large scale integrated (VLSI) fabrication. There is no pattern missing due to exfoliation after ultrasonic cleaning with frequency of 28 kHz and 300 W of power, and after being scrubbed over 10 cycles with a high pressure water jet. Reflectivity and optical density of the Mo‐silicide film are not affected by acidic chemicals. Moreover, dry etching can be done at a rate of 50 nm/min; more than five times as fast as etching of a chromium (Cr) mask.