By Topic

High performance very large scale integrated photomask with a silicide film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Watakabe, Y. ; LSI R&D Laboratory, Mitsubishi Electric Corporation, 4‐1 Mizuhara, Itami 664 Japan ; Matsuda, S. ; Shigetomi, A. ; Hirosue, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A molybdenum silicide (Mo‐silicide) film deposited on a quartz glass substrate offers major advantages as a high performance photomask material for very large scale integrated (VLSI) fabrication. There is no pattern missing due to exfoliation after ultrasonic cleaning with frequency of 28 kHz and 300 W of power, and after being scrubbed over 10 cycles with a high pressure water jet. Reflectivity and optical density of the Mo‐silicide film are not affected by acidic chemicals. Moreover, dry etching can be done at a rate of 50 nm/min; more than five times as fast as etching of a chromium (Cr) mask.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:4 ,  Issue: 4 )