Cart (Loading....) | Create Account
Close category search window

PtSi contact metallurgy using electron‐beam evaporated Pt films and different annealing processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chang, Chin‐An ; IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Cunningham, B. ; Segmuller, A. ; Huang, H.‐C.W.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Pt films deposited by electron‐beam evaporation onto both heated and unheated Si substrates have been used to form PtSi by different annealing sequences and ambients. Pt films deposited on substrates at 350 °C show complete formation of PtSi. Subsequent annealing at 550 °C is needed to form the protective oxide desired for device processing, with little dependence on the annealing ambients used. Pt films deposited on unheated substrates, on the other hand, show a partial formation of Pt2Si. The formation of PtSi by further annealing of such films is clearly dependent on the annealing sequence and ambient used. A three‐temperature sequence at 200/300/550 °C in forming gas is shown to allow a complete reaction between Pt and Si, and to develop a surface protective oxide of excellent resistance against etching in aqua regia. PtSi films formed by single‐temperature annealing at 550 °C in various ambients, however, show incomplete reactions between Pt and Si, leaving unreacted Pt and traces of Pt2Si, and a surface passivating oxide of poor resistance against aqua regia. The results on such evaporated Pt films are therefore similar to those reported earlier for the sputtered Pt. Film structures and compositions, phases formed, and Schottky diodes using different processes are analyzed and compared with those using sputtered Pt.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:4 ,  Issue: 3 )

Date of Publication:

May 1986

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.