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A method of repairing short circuit defects in integrated circuits using a submicron focused ion beam is described. The technique is applicable to cutting conductive lines in fully processed wafers, whether or not they have been encapsulated. In a manner analogous to scanning electron microscopy, images of the integrated circuit features and defects are produced. Material is removed by slowly rastering the ion beam over the defect area, under computer control. Examples of focused ion beam repair applied during the testing phase of new chip designs are presented.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:4 , Issue: 1 )
Date of Publication: Jan 1986