Cart (Loading....) | Create Account
Close category search window
 

Reactive ion etching of SiO2 with vertical sidewalls and its application to ion‐implantation masks for bubble devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gokan, H. ; Microelectronics Research Laboratories, NEC Corporation, 4‐1‐1, Miyazaki, Miyamae‐ku, Kawasaki 213, Japan ; Mukainaru, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.582950 

Silicon dioxide patterns having vertical sidewalls have been obtained without pattern width loss by reactive ion etching in CF4. The polymerization effect, caused by fluorine deficiency in the plasma, is found to influence not only the morphology of the etched resist surface but also the SiO2 etching profiles. The polymerization is greatly reduced by depressing the temperature rise during etching. A temperature‐controlled cathode and a heat sink material are used for this purpose. The polymerization is further reduced by increasing flow rate, by increasing pressure and by decreasing power density. The SiO2 patterns having vertical sidewalls are obtained under the no‐polymerization etching conditions. These SiO2 patterns have been successfully applied to ion‐implantation masks for 16 Mbit bubble devices.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:3 ,  Issue: 6 )

Date of Publication:

Nov 1985

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.