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Preparation of low‐reflectivity Al–Si film using dc magnetron sputtering and its application to multilevel metallization

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3 Author(s)
Kamoshida, K. ; Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243‐01, Japan ; Makino, T. ; Nakamura, H.

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A low‐reflectivity aluminum–silicon (LR Al–Si) film is prepared using a dc magnetron sputtering system under high Ar pressures. At a wavelength 4360 Å, the Al–2% Si film deposited at 3.99 Pa shows a specular reflectivity of 0.15 and a diffuse reflectivity of 0.10. The low‐reflectivity is ascribable to the formation of columnar structures of several hundred angstroms with open boundaries. The formation is caused by thermalization of sputtered Al(Si) atoms and the suppression of surface migration by Si atoms. Microvoids formed between columnar crystallites are thought to absorb incident light. This film is applied to multilevel metallization, and the results obtained include improvement of patternability in photolithography, reduction of hillock formation, and thermal stability of contact characteristics. This film is thus attractive because it is simply prepared and processing procedures for multilevel metallization do not require any major modification of conventional processes.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:3 ,  Issue: 5 )