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Vacancy buckling model for the (111) surface of III–V compound semiconductors

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4 Author(s)
Tong, S.Y. ; Laboratory for Surface Studies and Department of Physics, University of Wisconsin–Milwaukee, Milwaukee, Wisconsin 53201 ; Xu, G. ; Hu, W.Y. ; Puga, M.W.

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Results comparing low‐energy electron diffraction show that the (2×2) GaAs (111) and GaP (111) surfaces can both be explained by the vacancy buckling model. In this model, a surface group III atom is missing. This allows dangling bonds on the remaining groups III and V atoms to rehybridize. We also compare the LEED results with those of other spectroscopies and with bond lengths found on GaAs (110).

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:3 ,  Issue: 4 )