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Results comparing low‐energy electron diffraction show that the (2×2) GaAs (111) and GaP (111) surfaces can both be explained by the vacancy buckling model. In this model, a surface group III atom is missing. This allows dangling bonds on the remaining groups III and V atoms to rehybridize. We also compare the LEED results with those of other spectroscopies and with bond lengths found on GaAs (110).