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Deep level transient spectroscopy was used to study the defects introduced during ion beam sputter deposition of Mo Schottky barrier devices on n‐type Si. It was found that the sputter‐induced defects in wafers annealed at 950 °C before sputter deposition were different from those in wafers that were annealed at 450 °C before sputter deposition. Hence, it was concluded that identical premetallization annealing should be done when comparing defects introduced by different processes.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:3 , Issue: 3 )
Date of Publication: May 1985