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Application of the GHOST proximity effect correction scheme to round beam and shaped beam electron lithography systems

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3 Author(s)
Owen, Geraint ; Hewlett–Packard Laboratories, Palo Alto, California 94304 ; Rissman, P. ; Long, Marsha F.

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The GHOST proximity effect correction scheme has been applied to a round beam lithography system and also to a shaped beam system. It is shown that the image contrast of the GHOST scheme is constant at all spatial frequencies at which forward scattering is insignificant: the flatness of the modulation transfer function corresponds to the removal of the proximity effect. The effects of errors in the correction dose, the correction beam diameter, and the registration between the pattern and correction exposures have been calculated analytically, and it is shown that the allowable tolerances for these parameters are wide.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:3 ,  Issue: 1 )

Date of Publication: Jan 1985

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