By Topic

Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kyung Ha Lee ; Dept. of Phys., Kyung Hee Univ., Seoul, South Korea ; Young Min Jhon ; Hyuk Jin Cha ; Jin Jang

The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiN/sub x/) ion-stopper and laser annealed poly-Si. The fabricated poly-Si TFT using SiN/sub x/ as the ion-stopper as well as the gate insulator exhibited a field effect mobility of 110 cm2/Vs, subthreshold voltage of 5.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of /spl sim/106. Low off-state leakage current of 2.4×10/sup -2/ A/μm at the drain voltage of 5 V and the gate voltage of -5 V was achieved.

Published in:

IEEE Electron Device Letters  (Volume:17 ,  Issue: 6 )