By Topic

Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kim, D.M. ; Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea ; Jun, Y. ; Sohn, Y.S. ; Kim, J.W.
more authors

The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995