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A finite width impurity source model for linear doping profiles

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3 Author(s)
Lai, T.M.L. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong ; Sin, J.K.O. ; Ko, P.K.

In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995

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