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Simulation of Ge implanted SiGe-channel p-MOSFETs

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2 Author(s)
Guo-Fu Niu ; Dept. of Electron. Eng., Fudan Univ., Shanghai, China ; Gang Ruan

This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO2-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995