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Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product

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4 Author(s)
Han, T.-H. ; High Speed Devices Sect., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Cho, D.H. ; Lee, S.-M. ; Ryum, B.R.

A low thermal-budget SiGe base heterojunction bipolar transistor (HBT) with a record current gain-Early voltage product (β·Va) has been fabricated using atmospheric pressure (AP) CVD. After growing the SiGe layer on the wafer patterned by local oxidation of silicon (LOCOS), the HBT received thermal annealing only one time for drive-in and activation of arsenic (As) dopant in the polysilicon-emitter. For the 1×4 μm2 emitter, typical value of β·Va is 200,000 V (β=2,000 and Va=100 V) at the collector current of 0.9 mA

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995