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Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate

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7 Author(s)
Qi, W.J. ; Dept. of Electron. Eng., Fudan Univ., Shanghai, China ; Li, B.Z. ; Jiang, G.B. ; Gu, Z.G.
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The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si 1-xGex/Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995

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