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A new type MOS-gated tunnel transistor with a Schottky barrier

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1 Author(s)
M. Kimura ; Fac. of Eng., Tohoku Gakuin Univ., Tagajo, Japan

A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995