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Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage

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11 Author(s)
Wen-Chin Tsay ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Yen Ann Chen ; Jyh-Wong Hong ; A. Chen
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Several 8×4 cm2 single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p+ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995