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Fabrication and characterization of platinum nanocrystalline material grown by electron‐beam induced deposition

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3 Author(s)
Koops, H.W.P. ; Deutsche Telekom AG, FTZ, Am Kavalleriesand 3, 64295 Darmstadt, Germany ; Kaya, A. ; Weber, M.

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The technique of electron‐beam induced deposition allows three‐dimensional structures to be generated on the nanometer scale. This is achieved in a scanning electron microscope equipped with a lithography attachment that enables separate position and time control for every pixel. By decomposing adsorbed molecules with the electron beam, structures are created on arbitrarily chosen substrates with nm precision under computer control. Deposits containing metallic nanocrystallites can be produced using organometallic precursor materials. The decomposition of cyclopentadienylplatinum (IV)‐trimethyl (CpPtMe3) results in platinum single crystals with a 2 nm diameter embedded in a carbon‐containing amorphous matrix. The metal content of deposits can be adjusted by choosing an appropriate acceleration voltage and beam current for deposition. The growth rate of deposits from CpPtMe3 is superior to that of frequently used organogold compounds. Tips can be deposited with growth rates up to 150 nm/s. This property is in favor of a higher throughput for nanofabrication. The deposition cross section for this precursor molecule is estimated at 1×10-16 cm2. The electrical resistivity of material deposited at room temperature is measured by a two‐point technique and amounts to 1–100 Ω cm depending on the current employed for deposition. The technique is applied to generate fields of dot marks visible in the optical microscope for metrology purposes. These dot arrays can be fabricated on the surface of finished three‐dimensional structures without additional treatments like resist deposition or development. © 1995 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 6 )