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Effects of growth temperature on the SiO2/Si(100) interface structure

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5 Author(s)
Lu, Z.H. ; Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A 0R6 ; Graham, M.J. ; Tay, S.P. ; Jiang, D.T.
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Synchrotron radiation photoemission spectroscopy (PES) has been used to study thermal SiO2/Si(100) interfaces. Oxides were grown at 700, 800, 900, and 1000 °C and etched back to a thickness ∼0.5–1.5 nm for PES measurements. Comparison of Si 2p core levels with in situ ultrahigh vacuum‐grown SiO2 on Si(100) indicated that various Si oxidation states, Six+, are present at the interface. The results show that the amount of both Si2+ and Si3+ increases with increasing oxidation temperature while the amount of Si1+ remains constant. For these furnace grown oxides, structural relaxation to relieve strains rather than kinetic growth considerations governs the structure and suboxide distribution at the SiO2/Si(100) interface. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 4 )

Date of Publication:

Jul 1995

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