By Topic

Technology of infrared rapid thermal annealing and its application in VLSI

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hui-Wang Lin ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Rong-Hua Liu ; Bi-Xian Chen ; Hong-Fa Luan

The technology and equipment of the infrared rapid thermal annealing for VLSI is reported. The equipment used for rapid thermal annealing has been made with an radio frequency (RF)-induced graphite heater in a quartz housing as an infrared heating source. By using this technology and equipment the fabrication of shallow junction, the formation of silicide, the effect of BPSG reflow and annihilating the micro defects and thermal donor in CZ Si single crystal are discussed

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995