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Novel WSi/Au T‐shaped gate GaAs metal–semiconductor field‐effect‐transistor fabrication process for super low‐noise microwave monolithic integrated circuit amplifiers

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10 Author(s)
Takano, H. ; Optoelectronics and Microwave Devices Laboratory, Mitsubishi Electric Corporation, 4‐1 Mizuhara, Itami, 664, Japan ; Hosogi, K. ; Kato, T. ; Oku, T.
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A fully ion‐implanted self‐aligned T‐shaped gate GaAs metal–semiconductor field‐effect transistor (MESFET) with high frequency and extremely low‐noise performance has been successfully fabricated for super low‐noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf‐micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self‐alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low‐noise single‐stage MMIC amplifier with an excellent low‐noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low‐noise MMICs based on ion‐implanted self‐aligned gate MESFET technology. © 1995 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 3 )