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Ultra-shallow junction formation using cobalt silicide as diffusion source

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3 Author(s)
Kal, S. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Kasko, I. ; Ryssel, H.

Ultra-thin CoSi2 films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi2 on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (xj<100 nm) were characterized by fabricating diodes

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995