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CoSi2/SiGe contact formation by Co/a-SiGe/Si solid state reaction

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5 Author(s)
Qi, W.J. ; Dept. of Electron. Eng., Fudan Univ., Shanghai, China ; Li, B.Z. ; Jiang, G.B. ; Huang, W.N.
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The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi2/SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995