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Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular‐beam epitaxy

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3 Author(s)
Chen, A.C. ; Department of Electrical, and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 ; Moy, A.M. ; Cheng, K.Y.

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We report current injected stimulated emission in AlGaInP/Ga0.65In0.35P heterostructures grown on commercially available GaAs0.6P0.4 substrates by gas source molecular‐beam epitaxy. Room temperature photoluminescence of bulk GaInP grown on these substrates exhibited a full‐width half‐maximum of 36 meV, which is equal to the narrowest reported. At 77 K laser devices exhibited yellow stimulated emission near 5735 Å with a current density of 900A/cm2. © 1995 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 2 )