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A new gate current measurement technique for the characterization of hot-carrier-induced degradation in MOSFETs

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1 Author(s)
Leang, S.E. ; Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

The floating-gate technique has been used extensively for studying hot-carrier effects in MOSFETs. However, this technique can cause the device to degrade if the measurement time is too long. A new method is proposed, which allows the Ig-Vg curves of the MOSFETs to be determined in a shorter time, thereby reducing the risk of degrading the test device during the measurement process

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995

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