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Anomalous narrow width behavior of deep sub-micrometer MOSFETs with LOCOS isolation

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3 Author(s)
Fung, S.K.H. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci, & Technol., Clear Water Bay, Hong Kong ; Chan, M. ; Ko, P.K.

The effect of scaling down the channel width on the threshold voltage of deep submicron MOSFETs with LOCOS isolation has been investigated. The channel doping is increased excessively as the oxide thickness scales down in modern deep submicron technology. This results in threshold voltage reduction as channel width is scaled-down. The trend is verified by both experiment and process simulation

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995