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Hot-carrier induced trapped carriers and interface states in MOSFETs observed by gate-to-drain capacitance measurement

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2 Author(s)
Ghodsi, R. ; AWA MicroElectron., Homebush, NSW, Australia ; Yeow, Y.T.

Hot carrier induced trapped carriers and interface states in n- and p-channel MOSFETs were studied using small signal gate-to-drain capacitance measurements. The results presented concentrate on the stress condition resulting in a high gate-to-drain transverse electric field. Under this condition the degradation of both n- and p-channel devices was found to be due to the trapping of majority carriers and generation of acceptor interface states in the upper half of the bandgap

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995