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GaAs growth on (111)B substrates by molecular‐beam epitaxy: A study of the first stages of growth on ultraviolet–ozone prepared surfaces

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3 Author(s)
García, B.J. ; Laboratoire d’Analyse et d’Architecture des Systèmes du Centre National de la Recherche Scientifique, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex, France ; Fontaine, C. ; Munoz Yague, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.588365 

UV–ozone substrate preparation and molecular‐beam epitaxial growth conditions of GaAs on (111)B GaAs substrates are reported. Changes in the reflection high‐energy electron diffraction pattern (RHEED) during the first stages of growth reflect the planarization process over an initially rough surface. New evidence of this process is reported, based on the intensity oscillations of the RHEED specular beam, which highlights a rise of the measured growth rate in the first steps of growth during surface flatness recovery. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 2 )

Date of Publication:

Mar 1995

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