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Optimization of interfaces in InGaAs/InP heterostructures grown by gas source molecular‐beam epitaxy

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8 Author(s)
Mozume, T. ; Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan ; Kashima, H. ; Hosomi, K. ; Ouchi, K.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.588364 

A novel source switching procedure in gas source molecular‐beam epitaxy achieves abrupt interfaces in lattice‐matched InGaAs/InP. In this procedure, the source supply is interrupted at each interface to reduce excess residual As or P atoms on the InGaAs or InP surfaces. The interruption time is optimized by characterizing the heterointerfaces by Auger electron microscopy and photoluminescence spectroscopy. High‐resolution transmission electron microscopy reveals that each heterointerface of single quantum wells grown by this optimized switching procedure has no transition region. To our knowledge, this is the first successful growth of a perfectly abrupt InGaAs/InP heterointerface. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 2 )

Date of Publication:

Mar 1995

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