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Characteristics of δ ‐doped InGaAs/GaAs pseudomorphic double‐quantum‐well high electron mobility transistors

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4 Author(s)
Hsu, R.T. ; Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China ; Kao, M.J. ; Wang, J.S. ; Hsu, W.-C.

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δ‐doped InGaAs/GaAs pseudomorphic double‐quantum‐well high electron mobility transistors grown by low pressure metalorganic chemical vapor deposition are fabricated and demonstrated. The heterostructure with 2 μm gate length and 100 Å channel spacer thickness shows a peak extrinsic transconductance and a maximum saturation current density of 121 mS/mm and 423 mA/mm at 300 K, respectively. Meanwhile, an interesting broad twin‐peak transconductance plateau (∼4 V) is observed. © 1995 American Vacuum Society

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 2 )