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Investigation of silicon transport in the neutral background of a plasma activated reactive evaporation system

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3 Author(s)
Higgins, Ben ; Plasma Research Laboratory, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia ; Durandet, Antoine ; Boswell, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.587996 

The transport of silicon vapor from an electron‐beam evaporation source through argon and hydrogen gas in pressures near 1.0 mTorr has been studied. The flux–distance relationships for the effusion/diffusion of the evaporant through the device are found to vary with the type of filling gas. The investigation includes both a simple theoretical model and experiment. The results of each study are in good agreement. Cross sections for the energy‐averaged momentum transfer collisions of silicon with the filling gases (argon, hydrogen) at thermal energies have been determined. © 1995 American Vacuum Society

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:13 ,  Issue: 2 )

Date of Publication:

Mar 1995

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