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An energy balance equation based 0.1 μm MOSFET model including velocity overshoot behavior

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1 Author(s)
Jai-Hoon Sim ; Memory Div., Samsung Electron. Co., Kyungki-Do, South Korea

In order to evaluate the velocity overshoot phenomenon in the deep submicron MOS devices, the energy balance equation should be incorporated with the drift-diffusion equation that includes thermoelectric diffusion. This paper presents an analytical current model for deep submicron MOS devices by solving the energy balance equation. Our model results show good agreement with experimental results. We have successfully derived the drain current model composed of drift and thermoelectric currents

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995