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Updated system model for x‐ray lithography

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5 Author(s)
Khan, M. ; Department of Electrical and Computer Engineering, University of Wisconsin–Madison, Madison, WI 53706 ; Mohammad, L. ; Xiao, J. ; Ocola, L.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.587577 

We present an updated global model for x‐ray lithography based on realistic models for image formation, demonstrating how the extendibility of x‐ray lithography is well in the nanometer range. We apply these models to define the most convenient spectral range for x‐ray lithography manufacturing and the parameters of mirrors and filters to be used in an optimized beam line.

Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 6 )

Date of Publication: Nov 1994

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