Updated system model for x‐ray lithography
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We present an updated global model for x‐ray lithography based on realistic models for image formation, demonstrating how the extendibility of x‐ray lithography is well in the nanometer range. We apply these models to define the most convenient spectral range for x‐ray lithography manufacturing and the parameters of mirrors and filters to be used in an optimized beam line.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:12
,
Issue:
6
)
Date of Publication: Nov 1994