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Effect of photo acid generator concentration on the process latitude of a chemically amplified resist

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7 Author(s)
Petrillo, K.E. ; IBM Semiconductor Research Development Center, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 ; Pomerene, Andrew T.S. ; Babich, Edward D. ; Seeger, David E.
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A positive tone chemically amplified photoresist was evaluated for use on a 0.44 NA 248 nm excimer laser stepper. The effects of various formulation changes were examined with respect to exposure latitude, depth of focus, resolution, and bias between isolated and grouped features. Of particular interest was the relationship between the percent of photo acid generator (PAG) in the resist and the process latitude. It was found that several aspects of the process window increased as the PAG content of the resist decreased. An increase in dose was expected and observed with the decrease in PAG concentration. This would reduce excimer stepper throughput by approximately 25%.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 6 )