Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.587473
The creation of a localized etch stop by focused ion beam implantation of Ga+ into Si combined with selective material removal by sputtering has been used to produce submicron size three‐dimensional structures. These funnellike structures have been used to characterize probes used in atomic force microscopy.
Published in:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
(Volume:12
,
Issue:
6
)
Date of Publication: Nov 1994
- Page(s):
- 3571 - 3575
- ISSN :
- 1071-1023
- Digital Object Identifier :
- 10.1116/1.587473
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 1994
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
