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The creation of a localized etch stop by focused ion beam implantation of Ga+ into Si combined with selective material removal by sputtering has been used to produce submicron size three‐dimensional structures. These funnellike structures have been used to characterize probes used in atomic force microscopy.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (Volume:12 , Issue: 6 )
Date of Publication: Nov 1994