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Lithographic performance of a negative resist under scattering with angular limitation for projection electron lithography exposure at 100 keV

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13 Author(s)
Tarascon, R.G. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Bolan, K. ; Blakey, M. ; Camarda, R.M.
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Scattering with angular limitation for projection electron lithography (SCALPEL)TM [S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990)] has been used to evaluate the lithographic performance of a negative‐acting silicon containing chloromethylstyrene resist at 100 keV [A. E. Novembre, M. J. Jurek, A. Kornblit, and E. Reichmanis, Polym. Eng. Sci. 29, 920 (1989)]. This article presents the preliminary evaluation of the resist in a small field of view SCALPEL machine using masks with a membrane area of 1 mm2. A resolution of 0.15 μm was obtained at 61 μC/cm2. Furthermore, the good electron‐beam sensitivity of this well‐characterized negative resist has allowed us to optimize the alignment, astigmatism, and focus of the experimental tool.  

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 6 )