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A new scheme for complete cancellation of charge injection distortion in second generation switched-current circuits

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3 Author(s)
Zeng, X. ; Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hong Kong ; Tse, C.K. ; Tang, P.S.

This paper begins with an analysis of the charge injection error in the second-generation current memory cell. By combining the circuit-replication technique and the n-step principle, a new scheme for simultaneously cancelling both signal-dependent and signal-independent charge injection errors in second-generation switched-current circuits is proposed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995