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Photovoltaic characteristics of CuInS2/CdS heterojunction

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7 Author(s)
Gye-Choon Park ; Dept. of Electr. Eng., Mokpo Nat. Univ., South Korea ; Jin Lee ; Hae-Duck Chung ; Woon-Jo Jeong
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CuInS2/CdS heterojunction has been fabricated by depositing CdS thin film with dopant In on ternary compound CuInS2 thin film. Its best conversion efficiency was 5.66% under the illumination of 100 mW/cm2, and its series resistance and lattice mismatch was 5.1 Ω and 3.2% respectively. Besides, 4-layer structure heterojunction of low ρ-CuInS2/high ρ-CuInS 2/high ρ-CdS/low ρ-CdS has been fabricated. Its bast conversion efficiency was 8.25% under the illumination of 100 mW/cm2, and its series resistance and lattice mismatch was 4.3 Ω and 2.8% respectively

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995