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Electro-absorption and refraction at 1.5 μm in InGaAs/AlGaAs superlattice growth on GaAs substrate

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3 Author(s)
M. C. Y. Chan ; Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong ; E. H. Li ; K. S. Chan

High indium concentration In0.65Ga0.35As/Al 0.33Ga0.67As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 μm optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995