Localised bandgap engineering in III-V semiconductor quantum well structures for optoelectronic devices

In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits.