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A novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits

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4 Author(s)
Chan, M. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Fung, S.K.H. ; Chenming Hu ; Ko, P.K.

A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995