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Fabrication and its response characteristics of MELO accelerometer

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4 Author(s)
Pak, J.J. ; Dept. of Electr. Eng., Korea Univ., Seoul, South Korea ; Yi, S.H. ; Sung, Y.K. ; Neudeck, Gerold W.

This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g

Published in:

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Date of Conference:

6-10 Nov 1995