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Structural and optical characterizations of InAsP/InP strained multiple quantum wells grown on InP (111)B substrates

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6 Author(s)
Hou, H.Q. ; Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093 ; Tu, C.W. ; Shan, W. ; Hwang, S.J.
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InAsP/InP strained multiple quantum wells (MQWs) with specular surfaces were grown on InP (111)B substrates by gas‐source molecular beam epitaxy. Cross‐sectional transmission electron microscopy and high‐resolution x‐ray rocking curves show that the InAsP/InP (111)B MQW structures possess sharp and uniform interfaces, excellent periodicity, and crystalline quality. Structural parameters were extracted accurately from a dynamical‐theory simulation by considering the anisotropy of the (111) strain tensor. Low‐temperature photoluminescence and photoluminescence excitation measurements revealed interband excitonic transitions, and the energies agree with a calculation with an internal piezoelectric field taken into account.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 2 )

Date of Publication:

Mar 1994

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