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Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures

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4 Author(s)
Ibbetson, J.P. ; Materials Department, University of California, Santa Barbara, California 93106 ; Mirin, R.P. ; Mishra, U.K. ; Gossard, A.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.587084 

This article reports on the observation of reflection high‐energy electron diffraction oscillations during growth of GaAs by molecular beam epitaxy at temperatures as low as 60 °C. At low temperatures (≪300 °C), the amplitude of the oscillations is shown to be sensitive to the As:Ga flux ratio. The largest amplitude oscillations are observed under stoichiometric conditions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 2 )

Date of Publication:

Mar 1994

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