By Topic

Measurements of potentials and sheath formation in plasma immersion ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Collins, G.A. ; Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories, Menai NSW 2234, Australia ; Tendys, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.587363 

Collecting and emitting probes have been used to explore the distribution of potentials and the dynamic behavior of the cathodic sheath in the rf glow discharge plasmas used for plasma immersion ion implantation (PI3). On application of a negative voltage pulse, the sheath expands rapidly but comes to a steady‐state position within a few microseconds. The potential distribution then remains stable as long as there is sufficient plasma outside the sheath region to replace the ions lost to the cathode. The various dc potentials in the plasma that arise from rectification of the rf fields are also important. At power levels up to 500 W, the plasma potential is several hundred volts above the average dc potential of the antenna. The magnitude of this voltage difference depends on the antenna geometry, its insulation from the plasma and the dc potential that can exist between it and the chamber walls. The floating potential of a typical PI3 target can vary from 50 to 300 V below the plasma potential but in all cases the difference is sufficient to ensure that there is a sheath and presheath structure around the target before the application of the high voltage pulse.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 2 )