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Two‐dimensional doping profiles from experimentally measured one‐dimensional secondary ion mass spectroscopy data

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3 Author(s)
Goodwin‐Johansson, Scott ; MCNC, Center for Microelectronic Systems Technologies, Research Triangle Park, North Carolina 27709 ; Liu, Xuefeng ; Ray, Mark

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Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectroscopy (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as‐implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one‐dimensional SIMS measurements. Measurements have been done with a Perkin Elmer Model 6300 SIMS and a Cameca IMS‐3f SIMS. Refinements have been made in the numerical alignment of the separate one‐dimensional SIMS data sets, which lead to more accurate reconstructions of the two‐dimensional profiles.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:12 ,  Issue: 1 )