By Topic

Fabrication of high performance 512K static‐random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x‐ray lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Viswanathan, R. ; IBM Semiconductor Research and Development Center, T. J. Watson Research Center, Yorktown Heights, New York, 10598 ; Seeger, D. ; Bright, A. ; Bucelot, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Functional 512K static random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal–oxide semiconductor technology using compact storage ring x‐ray lithography. In this demonstration a comparison of critical dimension control was made between x‐ray and optical (i‐line and excimer laser) lithography by fabricating SRAM devices using both lithographic techniques. For the x‐ray fabricated devices the channel length, a key device performance parameter, was controlled to within 0.036 μm (3σ), demonstrating the excellent process robustness, and dimensional control available from x‐ray lithography. These SRAMs had excellent electrical characteristics, including cycle times of 1.8 ns and access times of 3.7 ns. The ability of the existing x‐ray lithography infrastructure to produce a fully functional (‘‘perfect’’) chip has been demonstrated in a companion device fabrication program. A 512K SRAM chip of a slightly different design, with 0.35 μm minimum channel length, was fabricated with 100% bit yield using x‐ray lithography. This article describes these device demonstrations, including the observed advantages of x‐ray lithography, as well as the status of IBM’s x‐ray lithography program and associated infrastructure.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:11 ,  Issue: 6 )