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Simulation of locally enhanced three‐dimensional diffusion in chemically amplified resists

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7 Author(s)
Zuniga, M. ; Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 ; Wallraff, G. ; Tomacruz, E. ; Smith, B.
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Evidence from simulation, linewidth measurements, and in situ Fourier‐transform infrared (FTIR) data are presented which suggests that a type II diffusion front is moving through positive tone t‐BOC material during postexposure bake. A steady increase in linespace of 50 nm/min is observed in IBM APEX‐E and even faster rates can be found in generic t‐BOC resists. The simultaneous reaction and three‐dimensional deprotection dependent diffusion simulation was carried out with a massively parallel approach. A novel FTIR measurement of transmission versus time of patterned and unpatterned wafers during postexposure bake corroborated scanning electron microscope linewidth measurements.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:11 ,  Issue: 6 )