By Topic

Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating mask

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Tennant, D.M. ; AT&T Bell Laboratories, Holmdel, New Jersey 07733 ; Koch, T.L. ; Verdiell, J‐M. ; Feder, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.586656 

We describe near optimum near field holography grating masks patterned by e‐beam lithography and a distributed Bragg reflector (DBR) multiwavelength laser array fabricated using near field printing with this mask. Grating pitches in the array ranged from 242.861 to 243.750 nm in 0.127 nm steps. Data on the pitch precision and pitch adjustment is presented. Use of a conventional UV source rather than laser illumination both greatly simplified the printing process and eliminated coherent artifacts from the printed gratings. Chemically etched InP test gratings are shown to be extremely ‘‘clean’’ in appearance and low in edge roughness. DBR laser arrays designed with 100 GHz frequency separation were processed using the mask described. The measured frequency separation was 99 GHz which could be further adjusted with a tuning section of the four‐section laser design. Characterization of a similar grating mask containing 16 wavelengths with similar pitch increments is also described.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:11 ,  Issue: 6 )